3D Stacked DRAM Products with Bi-STAR™
These 3D memory devices employ Tezzaron’s revolutionary FaStack®
technology to integrate several layers of DRAM with a powerful controller
layer. Each DRAM layer is denser
than a single-layer DRAM device, so the integrated stack boasts truly dramatic
density and consumes far less power per bit than single-layer DRAMs.
In addition to the memory layers, each stacked device
incorporates a layer of circuitry with an on-board microcontroller that manages
the memory stack and provides a seamless standard interface. The
controller layer also contains Tezzaron’s patented Bi-STAR™
self-test-and-repair circuitry to test the chip at power-up, remap any failed
cells, continuously monitor and repair the device, and invisibly correct both
hard and soft errors.
Available soon.
