About Technologies Products Investors Contact Us Site Map Press Kit Search

72 Mb Quad Rate (QTRII) Burst-2 3T-iRAM

Home
About
Technologies
Products
Investors
Contact Us
Site Map
Press Kit
Search

bulletTSC3Q272S Data Sheet rev 1.1 (Adobe .pdf format)

72 Mb Synchronous Quad Transfer Rate (QTRII™) 3T-iRAM®, Burst of 2; SRAM-Compatible

Error-resistant 3T-iRAM® technology
Dual DDRII Interface
Pin-compatible with QDRII™ and SigmaQuad-II™ SRAMs
Lead-free JEDEC-standard pinout and package
Burst of 2 Read and Write
Separate independent Read and Write data ports
Concurrent Read/Write transactions are supported
Separate Port Selects for depth expansion
Synchronous internally self-timed Writes
1.8 V +100/–100 mV core power supply
Expanded HSTL output voltage: 1.4 V to 1.9 V
Fully coherent read and write pipelines
ZQ pin for programmable output drive strength
IEEE 1149.1 JTAG-compliant Boundary Scan
165-bump 15mm x 17mm BGA, 1 mm bump pitch
Pin-compatible with 9Mb, 18Mb, 36Mb, and 144Mb devices

3T-iRAM® is a unique type of dynamic memory. Tezzaron has crafted these pseudo-static devices to provide entirely SRAM-compatible interfaces and timing. The unique design of these 3T memories provides soft error rates up to 10 times lower than equivalent high-speed, high-density SRAMs, while maintaining drop-in compatibility.

QTR™ (Quad Transfer Rate) is a Separate I/O architecture that makes these devices drop-in compatible with QDRII™ and SigmaQuad-II™ SRAMs. It accesses the memory array with two separate ports for Read and Write operations, using dedicated data input and output pins and a common address bus. This completely eliminates the “bus turn-around” time required in Common I/O devices. To maximize throughput, both data ports use DTRII™ (Double Transfer Rate) interfaces.

These pipelined synchronous 72Mb devices employ two input register clocks . The user can manipulate two output register clocks quasi-independently . All four of these clocks are independent single-ended clock inputs, not differential inputs, for precise data timing. If the output clocks are tied high, the input clocks are routed internally to fire the output registers instead.

These devices always transfer data in two packets. A0 is internally set to 0 for the first data transfer of a burst and automatically incremented to 1 for the second transfer.

Speed Parameter Synopsis:

 -333   -300   -267   -250   -200   -167 

(all units ns)

 tKHKH   3.00   3.30   3.75   4.00   5.00   6.00 
 tKHQV   0.45   0.45   0.45   0.45   0.45   0.50 

For pricing and availability, contact sales@tezzaron.com

Related Pages:

bulletSRAM Replacement Products
bullet3T-iRAM® Technology
Copyright © 2006-2007 Tezzaron® Semiconductor.  All rights reserved.  Revised: July 30, 2008
 

Home ] About ] Technologies ] Products ] Investors ] Contact Us ] Site Map ] Press Kit ] Search ]